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Chalechale, Amirali, Shalchian, Majid, Jazaeri, Farzan. (1401). Transient Analysis of Donor-like Surface Traps in GaN HEMTs. نشریه مهندسی عمران امیرکبیر, 54(Issue 2 (Special Issue)), 387-396. doi: 10.22060/eej.2022.21167.5460
Amirali Chalechale; Majid Shalchian; Farzan Jazaeri. "Transient Analysis of Donor-like Surface Traps in GaN HEMTs". نشریه مهندسی عمران امیرکبیر, 54, Issue 2 (Special Issue), 1401, 387-396. doi: 10.22060/eej.2022.21167.5460
Chalechale, Amirali, Shalchian, Majid, Jazaeri, Farzan. (1401). 'Transient Analysis of Donor-like Surface Traps in GaN HEMTs', نشریه مهندسی عمران امیرکبیر, 54(Issue 2 (Special Issue)), pp. 387-396. doi: 10.22060/eej.2022.21167.5460
Chalechale, Amirali, Shalchian, Majid, Jazaeri, Farzan. Transient Analysis of Donor-like Surface Traps in GaN HEMTs. نشریه مهندسی عمران امیرکبیر, 1401; 54(Issue 2 (Special Issue)): 387-396. doi: 10.22060/eej.2022.21167.5460

Transient Analysis of Donor-like Surface Traps in GaN HEMTs

AUT Journal of Electrical Engineering
مقاله 6، دوره 54، Issue 2 (Special Issue)، اسفند 2022، صفحه 387-396    اصل مقاله (1.13 M)
نوع مقاله: Research Article
شناسه دیجیتال (DOI): 10.22060/eej.2022.21167.5460
نویسندگان
Amirali Chalechale1؛ Majid Shalchian* 2؛ Farzan Jazaeri3
1Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran.
2Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran
3Researcher, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
چکیده
Charge trapping in Gallium Nitride-based devices affect their reliability and performance. In this paper, we study the dynamics of charge capture and emission in donor-like surface traps, and the impact of trapped charges on transient response of the drain current in Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). To simulate transient characteristics, traps are excited into their empty or filled state by applying initial pulse on the gate (gate-lag technique) or on the drain (drain-lag), and later the drain current is monitored during transition toward steady state condition. The results show up to 44% variation in drain current level, which reflects the importance of trapped charges in the device characteristics. The effect of physical parameters, including trap energy level and temperature, have been characterized using gate and drain-lag. A simple physical model is proposed (based on the Arrhenius relation) and calibrated with the simulation results to obtain the emission and capture time-constants. The results extracted from the physical model show that the time constant for capture and emission varies from few microseconds to few seconds depending on temperature and trap energy level, and the result are in good agreement with TCAD simulations. This is an important step toward incorporation of charge trapping effect into the charge-based compact model of GaN HEMTs. 
کلیدواژه‌ها
GaN HEMT؛ Trapping Effect؛ Current Collapse؛ Gate-lag؛ Drain-lag
مراجع
  1. K. Mishra, P. Parikh, Y.-F. Wu, “AlGaN/GaN HEMTs-an overview of device operation and applications,” Proceedings of the IEEE, 90(6) (2002) 1022-1031.
  2. Jazaeri, J.-M. Sallese, “Charge-based EPFL HEMT model,” IEEE Transactions on Electron Devices, 66(3) (2019) 1218-1229.
  3. Jazaeri, M. Shalchian, J.-M. Sallese, Transcapacitances in EPFL HEMT model, IEEE Transactions on Electron Devices, 67(2) (2019) 758-762.
  4. Allaei, M. Shalchian, F. Jazaeri, Modeling of short-channel effects in GaN HEMTs, IEEE Transactions on Electron Devices, 67(8) (2020) 3088-3094.
  5. Trassaert, B. Boudart, C. Gaquiere, D. Theron, Y. Crosnier, F. Huet, M. Poisson, Trap effects studies in GaN MESFETs by pulsed measurements, Electronics Letters, 35(16) (1999) 1386-1388.
  6. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. Mishra, I. Smorchkova, Current instabilities in GaN-based devices, IEEE Electron Device Letters, 22(2) (2001) 62-64.
  7. C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E. Wickenden, R.L. Henry, Trapping effects and microwave power performance in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, 48(3) (2001) 465-471.
  8. Vetury, N.Q. Zhang, S. Keller, U.K. Mishra, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, 48(3) (2001) 560-566.
  9. Meneghini, C. De Santi, T. Ueda, T. Tanaka, D. Ueda, E. Zanoni, G. Meneghesso, Time-and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate, IEEE Electron device letters, 33(3) (2012) 375-377.
  10. Syamal, X. Zhou, S.B. Chiah, A.M. Jesudas, S. Arulkumaran, G.I. Ng, A comprehensive compact model for GaN HEMTs, including quasi-steady-state and transient trap-charge effects, IEEE Transactions on Electron Devices, 63(4) (2016) 1478-1485.
  11. Grisolia, M. Shalchian, G.B. Assayag, H. Coffin, C. Bonafos, S. Schamm, S. Atarodi, A. Claverie, The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation, Nanotechnology, 16(12) (2005) 2987.
  12. Mitrofanov, M. Manfra, Mechanisms of gate lag in GaN/AlGaN/GaN High Electron Mobility Transistors, Superlattices and Microstructures, 34(1-2) (2003) 33-53.
  13. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, E. Zanoni, Reliability of GaN high-electron-mobility transistors: State of the art and perspectives, IEEE Transactions on Device and Materials Reliability, 8(2) (2008) 332-343.
  14. P. Ibbetson, P. Fini, K. Ness, S. DenBaars, J. Speck, U. Mishra, Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, Applied Physics Letters, 77(2) (2000) 250-252.
  15. Binari, W. Kruppa, H. Dietrich, G. Kelner, A. Wickenden, J. Freitas Jr, Fabrication and characterization of GaN FETs, Solid-State Electronics, 41(10) (1997) 1549-1554.
  16. Meneghesso, A. Chini, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, C. Gaquiere, Diagnosis of trapping phenomena in GaN MESFETs, in: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No. 00CH37138), IEEE, 2000, pp. 389-392.
  17. Tirado, J. Sanchez-Rojas, J. Izpura, Simulation of surface state effects in the transient response of AlGaN/GaN HEMT and GaN MESFET devices, Semiconductor science and technology, 21(8) (2006) 1150.
  18. Silvaco, ATLAS user's manual device simulation software, Santa Clara, CA, (2010).
  19. Miccoli, V.C. Martino, S. Reina, S. Rinaudo, Trapping and thermal effects analysis for AlGaN/GaN HEMTs by means of TCAD simulations, IEEE Electron Device Letters, 34(9) (2013) 1121-1123.
  20. M. Tirado, J.L. Sanchez-Rojas, J.I. Izpura, Trapping effects in the transient response of AlGaN/GaN HEMT devices, IEEE Transactions on Electron Devices, 54(3) (2007) 410-417.
  21. Jazaeri, C.-M. Zhang, A. Pezzotta, C. Enz, Charge-based modeling of radiation damage in symmetric double-gate MOSFETs, IEEE Journal of the Electron Devices Society, 6 (2017) 85-94.
  22. C. Binari, P. Klein, T.E. Kazior, Trapping effects in GaN and SiC microwave FETs, Proceedings of the IEEE, 90(6) (2002) 1048-1058.
  23. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U.K. Mishra, C. Canali, E. Zanoni, Surface-related drain current dispersion effects in AlGaN-GaN HEMTs, IEEE Transactions on Electron Devices, 51(10) (2004) 1554-1561.
  24. Mase, A. Wakejima, T. Egawa, Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias‐controllable field plate, physica status solidi (a), 214(8) (2017) 1600840.
  25. Grasser, Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities, Microelectronics Reliability, 52(1) (2012) 39-70.
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