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Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application | ||
| AUT Journal of Modeling and Simulation | ||
| مقاله 13، دوره 50، شماره 2، اسفند 2018، صفحه 195-202 اصل مقاله (1.11 M) | ||
| نوع مقاله: Research Article | ||
| شناسه دیجیتال (DOI): 10.22060/miscj.2018.13414.5072 | ||
| نویسندگان | ||
| V. Ezzati* ؛ A. Abdipour | ||
| Department of Electrical Engineering, Amir Kabir University of Technology, Tehran, Iran | ||
| چکیده | ||
| In this paper, a non-linear approach for design and analysis of solid-state power amplifiers is presented and used for AlGaN-GaN high electron-mobility transistor (HEMTs) on SiC substrate for Ku band(12.4 - 13.6 GHz) applications. With combining the output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear gain of 22.9 dB were achieved and good agreement has been obtained between the simulation and analysis results. | ||
| کلیدواژه‌ها | ||
| Non-linear GaN modeling؛ power amplifier؛ Ku band؛ harmonic balance | ||
| مراجع | ||
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