پیوندهای مفید
آمار
| تعداد نشریات | 7 |
| تعداد شماره‌ها | 410 |
| تعداد مقالات | 5,457 |
| تعداد مشاهده مقاله | 5,872,546 |
| تعداد دریافت فایل اصل مقاله | 5,231,170 |
An Active Pixel Sensor with Built-in a Unity Gain Buffer | ||
| AUT Journal of Electrical Engineering | ||
| مقاله 7، دوره 54، Issue 2 (Special Issue)، اسفند 2022، صفحه 397-408 اصل مقاله (1.57 M) | ||
| نوع مقاله: Research Article | ||
| شناسه دیجیتال (DOI): 10.22060/eej.2022.21098.5456 | ||
| نویسنده | ||
| masood teymouri* | ||
| Faculty of Electrical Engineering, Urmia University of Technology, Urmia, Iran | ||
| چکیده | ||
| This paper presents an Active Pixel Sensor (APS) with a built-in readout circuit. A unity-gain buffer as a pixel readout circuit is used to read the signals of four adjacent pixels. Compared to the conventional four-transistor APS (4T-APS) which is connected to a CMOS source-follower readout circuit, the introduced circuit has higher accuracy, higher linearity, and fewer transistors. Due to the high linearity and accuracy of the pixel readout circuit, the proposed method can help to improve the final image quality of the sensor. For a fair comparison between the conventional 4T-APS (with source-follower readout circuit) and the proposed circuit, both circuits are designed with the same power consumption. Simulation results show that the proposed circuit is 16% more accurate, has an 11% higher fill factor, and is 10 dB more linear than the conventional circuit. The total power consumption of the proposed circuit with a built-in buffer is almost 17 µW with a 1.8 V power supply, and its layout size is 14.8µm×14.8µm. The total number of transistors used in this method to read the signals of four Pinned-Photodiodes is 11, whereas in the conventional method, 16 transistors are required under the same circumstances. The proposed circuit is designed in 0.18µm CMOS technology. | ||
| کلیدواژه‌ها | ||
| Active Pixel Sensor؛ Pinned-Photodiode؛ voltage buffer؛ CMOS image sensor؛ pixel-array | ||
| مراجع | ||
|
[1] T. Hirayama, The evolution of CMOS Image Sensors, 2013 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013, pp. 5-8, doi: 10.1109/ASSCC.2013.6690968.
[2] J. Nakamura, Image sensors and signal processing for Digital Still Cameras, Boca Raton: CRC Press. 2006.
[3] D. Durini,High Performance Silicon Imaging,Fundamentals and Applications of CMOS and CCD Sensors,A volume in Woodhead Publishing Series in Electronic and Optical Materials,Elsevier, 2020.
[4] D.Durini, D.Arutinov, Fundamental principles of photosensing, Fundamentals and Applications of CMOS and CCD Sensors,In Woodhead Publishing Series in Electronic and Optical Materials, High Performance Silicon Imaging (Second Edition), 2020, doi:10.1016/B978-0-08-102434-8.00001-5.
[5] P. Feng, L. Liu and N. Wu, Pixel Design of Ultra-high Speed CMOS Image Sensor, IEEE 14th International Conference on ASIC (ASICON), 2021, pp. 1-4, doi: 10.1109/ASICON52560.2021.9620252.
[6] J. Xu, L. Shu, Z. Gao, Q. Chen and K. Nie, Analysis and Parameter Optimization of High Dynamic Range Pixels for Split Photodiode in CMOS Image Sensors, in IEEE Sensors Journal, vol. 22, no. 7, pp. 6748-6754, 1 April1, 2022, doi: 10.1109/JSEN.2022.3155482.
[7] K. -L. Chung, T. -Y. Liu and J. -S. Cheng, Novel and Optimal Luma Modification-Based Chroma Downsampling for Bayer Color Filter Array Images, in IEEE Open Journal of Circuits and Systems, vol. 1, pp. 48-59, 2020, doi: 10.1109/OJCAS.2020.2996624.
[8] Eric R. Fossum; Donald B. Hondongwa, A Review of the Pinned Photodiode for CCD and CMOS Image Sensors, IEEE Journal of the Electron Devices Society, Year, Vol. 2, 2014.
[9] M.teymouri, A highly linear and high-accurate CMOS image sensor, Analog Integr Circ Sig Process 102, 91–96, 2020, https://doi.org/10.1007/s10470-019-01553-4
[10] B. Razavi, Design of Analog CMOS Integrated Circuits, New York, NY: McGraw‐Hill, 2001.
[11] F. Wang and A. J. P. Theuwissen, Pixel Optimizations and Digital Calibration Methods of a CMOS Image Sensor Targeting High Linearity, in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 66, no. 3, pp. 930-940, March 2019, doi: 10.1109/TCSI.2018.2872627.
[12] F. Wang, L. Han and A. J. P. Theuwissen, Development and Evaluation of a Highly Linear CMOS Image Sensor With a Digitally Assisted Linearity Calibration, in IEEE Journal of Solid-State Circuits, vol. 53, no. 10, pp. 2970-2981, Oct. 2018, doi: 10.1109/JSSC.2018.2856252.
[13] F. Wang F,AJP. Theuwissen, Techniques for pixel-level linearity optimization, in Proc. Workshop CMOS Image Sensors High Perform. Appl. Paris, France. 2017: 1–20.
[14] G. Batistell, V.C. Zhang, J. Sturm, Color recognition sensor in standard CMOS technology, Solid. Electron. 102, 2014.
[15] H. Alaibakhsh and M. A. Karami, A shared transfer gate 2T pixel, 2017 IEEE 4th International Conference on Knowledge-Based Engineering and Innovation (KBEI), 2017, pp. 0522-0525, doi: 10.1109/KBEI.2017.8325033.
[16] M. Mori, M. Katsuno, S. Kasuga, T. Murata and T. Yamaguchi, 1/4-inch 2-mpixel MOS image sensor with 1.75 transistors/pixel, in IEEE Journal of Solid-State Circuits, vol. 39, no. 12, pp. 2426-2430, Dec. 2004, doi: 10.1109/JSSC.2004.837028.
[17] M. Kasano, Y. Inaba, M. Mori, S. Kasuga, T. Murata and T. Yamaguchi, A 2.0-/spl mu/m pixel pitch MOS image sensor with 1.5 transistor/pixel and an amorphous Si color filter, in IEEE Transactions on Electron Devices, vol. 53, no. 4, pp. 611-617, April 2006, doi: 10.1109/TED.2006.870286.
[18] C. Yin, T. Liao, K. -L. Liu, C. -C. Kao, C. -F. Chiu and C. -C. Hsieh, A 32-Stage 15-b Digital Time-Delay Integration Linear CMOS Image Sensor With Data Prediction Switching Technique, in IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 1167-1173, March 2017, doi: 10.1109/TED.2017.2655143.
[19] Y. Jo, S. Hong and O. Kwon, A Tileable CMOS X-Ray Line Detector Using Time-Delay-Integration With Pseudomultisampling for Large-Sized Dental X-Ray Imaging Systems, in IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 211-216, Jan. 2017, doi: 10.1109/TED.2016.2632131.
[20] J. Xu, X. Shi, K. Nie and Z. Gao, A Global Shutter High Speed TDI CMOS Image Sensor With Pipelined Charge Transfer Pixel, in IEEE Sensors Journal, vol. 18, no. 7, pp. 2729-2736, 1 April1, 2018, doi: 10.1109/JSEN.2018.2800743. | ||
|
آمار تعداد مشاهده مقاله: 367 تعداد دریافت فایل اصل مقاله: 372 |
||