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Rashtian, Mohammad, Shahpasandi, Mahdi. (1403). Low-Power MOSFET-Only Subthreshold Voltage Reference with High PSRR. نشریه مهندسی عمران امیرکبیر, 56(3), 439-452. doi: 10.22060/eej.2024.23046.5583
Mohammad Rashtian; Mahdi Shahpasandi. "Low-Power MOSFET-Only Subthreshold Voltage Reference with High PSRR". نشریه مهندسی عمران امیرکبیر, 56, 3, 1403, 439-452. doi: 10.22060/eej.2024.23046.5583
Rashtian, Mohammad, Shahpasandi, Mahdi. (1403). 'Low-Power MOSFET-Only Subthreshold Voltage Reference with High PSRR', نشریه مهندسی عمران امیرکبیر, 56(3), pp. 439-452. doi: 10.22060/eej.2024.23046.5583
Rashtian, Mohammad, Shahpasandi, Mahdi. Low-Power MOSFET-Only Subthreshold Voltage Reference with High PSRR. نشریه مهندسی عمران امیرکبیر, 1403; 56(3): 439-452. doi: 10.22060/eej.2024.23046.5583

Low-Power MOSFET-Only Subthreshold Voltage Reference with High PSRR

AUT Journal of Electrical Engineering
دوره 56، شماره 3، 2024، صفحه 439-452    اصل مقاله (1.48 M)
نوع مقاله: Research Article
شناسه دیجیتال (DOI): 10.22060/eej.2024.23046.5583
نویسندگان
Mohammad Rashtian* ؛ Mahdi Shahpasandi
Department of Aviation Electronics, Civil Aviation Technology College, Tehran, Iran
چکیده
This work presents a sub-nanowatt voltage reference (VR) achieving a high-power supply ripple rejection (PSRR). It utilizes a self-current biasing circuit to reduce the voltage dependency of the output voltage (VREF) to the power supply variations. For low-power operation, all transistors operate in the subthreshold region. The design's performance is verified through post-layout and Monte Carlo simulations in a standard 180 nm CMOS process. Results show that the proposed bandgap achieves an output voltage of 0.150 V with a PSRR of -81.5 dB at V­­dd = 1V. Notably, it eliminates the need for an additional startup circuit and consumes only 0.72 nW at T = 27°C with Vdd = 0.5V. The proposed voltage reference exhibits a temperature coefficient (TC) of approximately 18 ppm/°C over a temperature range of -20°C to 130°C while without using a trimming circuit a reasonable (σ VREF /μVREF) = 2.3% is obtained. This design's average line sensitivity (LS) is 0.072%/V (Vdd = 0.5V to 1.8V). However, the PSRR and LS values are temperature-dependent. At the high temperature of 130°C (worst-case), the PSRR and LS degrade to approximately -80.45 dB and 0.084 %/V, respectively.  The output noise at the frequency of 1 KHz is obtained as 167.34 nV/ √ Hz. The proposed VR occupies a small active area of 513.5 μm2.
کلیدواژه‌ها
Voltage Reference؛ Temperature Coefficient؛ Native Transistor؛ Line Sensitivity؛ Power Supply Ripple Rejection
مراجع
  1. Prasannakumar, A., N.T. Abraham, and K.J. Dhanaraj, MOSFETs-only sub-1-V voltage references for ultra-low-power applications. Analog Integrated Circuits and Signal Processing, 2020. 103(2): p. 355-365.
  2. Qiao, H., C. Zhan, and Y. Chen, A− 40° C to 140° C picowatt CMOS voltage reference with 0.25-V power supply. IEEE Transactions on Circuits and Systems II: Express Briefs, 2021. 68(9): p. 3118-3122.
  3. Fakharyan, I., M. Ehsanian, and H. Hayati, A 0.9-V supply, 16.2 nW, fully MOSFET resistorless bandgap reference using sub-threshold operation. Analog Integrated Circuits and Signal Processing, 2020. 103: p. 367-374.
  4. Pan, M., J. Xie, and L. Pang, A 0.7 V 5 nW CMOS sub-bandgap voltage reference without resistors. Analog Integrated Circuits and Signal Processing, 2020. 104: p. 71-79.
  5. Zhang, H., et al., A nano-watt MOS-only voltage reference with high-slope PTAT voltage generators. IEEE Transactions on Circuits and Systems II: Express Briefs, 2017. 65(1): p. 1-5.
  6. Alhasssan, N., Z. Zhou, and E.S. Sinencio, An all-MOSFET sub-1-V voltage reference with a—51–dB PSR up to 60 MHz. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2016. 25(3): p. 919-928.
  7. Shao, C.-Z., S.-C. Kuo, and Y.-T. Liao, A 1.8-nW,− 73.5-dB PSRR, 0.2-ms startup time, CMOS voltage reference with self-biased feedback and capacitively coupled schemes. IEEE Journal of Solid-State Circuits, 2020. 56(6): p. 1795-1804.
  8. Lin, J., et al., A 1-nW ultra-low voltage subthreshold CMOS voltage reference with 0.0154%/V line sensitivity. IEEE Transactions on Circuits and Systems II: Express Briefs, 2019. 66(10): p. 1653-1657.
  9. Osaki, Y., et al., 1.2-V supply, 100-nW, 1.09-V bandgap and 0.7-V supply, 52.5-nW, 0.55-V subbandgap reference circuits for nanowatt CMOS LSIs. IEEE Journal of Solid-State Circuits, 2013. 48(6): p. 1530-1538.
  10. Rashtian, M., Sub 1-V supply voltage-reference based on mutual temperature cancellation of VT and VTH. Analog Integrated Circuits and Signal Processing, 2020. 105(3): p. 477-482.
  11. Zhou, Z.-k., et al., A resistorless low-power voltage reference. IEEE Transactions on Circuits and Systems II: Express Briefs, 2016. 63(7): p. 613-617.
  12. Xin, X., et al., A 0.6-V, 1.56-nW, 5.87-ppm/° C, 0.23%/V CMOS-only subthreshold voltage reference with the threshold voltage difference. Circuits, Systems, and Signal Processing, 2022. 41(8): p. 4256-4274.
  13. Thomas Abraham, N. and D. KJ, MOSFET only low power sub‐bandgap voltage reference by subtraction of slope compensated proportional‐to‐absolute‐temperature voltage references. International Journal of Circuit Theory and Applications, 2023. 52(4): p. 1682-1696.
  14. Rashtian, M., A resistorless low-power voltage reference based on mutual temperature cancellation of VT and VTH. International Journal of Electronics, 2022. 109(8): p. 1407-1420.
  15. Wang, L. and C. Zhan, A 0.7-V 28-nW CMOS subthreshold voltage and current reference in one simple circuit. IEEE Transactions on Circuits and Systems I: Regular Papers, 2019. 66(9): p. 3457-3466.
  16. Seok, M., et al., A portable 2-transistor picowatt temperature-compensated voltage reference operating at 0.5 V. IEEE Journal of Solid-State Circuits, 2012. 47(10): p. 2534-2545.
  17. Basyurt, P.B., et al. A low-power low-noise CMOS voltage reference with improved PSR for wearable sensor systems. in 2017 IEEE International Symposium on Circuits and Systems (ISCAS). 2017. IEEE.
  18. Rashtian, M., MOS only nano-watt sub-bandgap voltage reference. Analog Integrated Circuits and Signal Processing, 2023. 114(3): p. 371-377.
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