Abbasi, Reza, Faez, Rahim, Horri, Ashkan. (1404). Vertical Tunneling Transistor Based on Gr-hBN-χ3 Borophene Heterostructure with AA Stack. نشریه مهندسی عمران امیرکبیر, 57(3), 461-472. doi: 10.22060/eej.2025.23756.5632
Reza Abbasi; Rahim Faez; Ashkan Horri. "Vertical Tunneling Transistor Based on Gr-hBN-χ3 Borophene Heterostructure with AA Stack". نشریه مهندسی عمران امیرکبیر, 57, 3, 1404, 461-472. doi: 10.22060/eej.2025.23756.5632
Abbasi, Reza, Faez, Rahim, Horri, Ashkan. (1404). 'Vertical Tunneling Transistor Based on Gr-hBN-χ3 Borophene Heterostructure with AA Stack', نشریه مهندسی عمران امیرکبیر, 57(3), pp. 461-472. doi: 10.22060/eej.2025.23756.5632
Abbasi, Reza, Faez, Rahim, Horri, Ashkan. Vertical Tunneling Transistor Based on Gr-hBN-χ3 Borophene Heterostructure with AA Stack. نشریه مهندسی عمران امیرکبیر, 1404; 57(3): 461-472. doi: 10.22060/eej.2025.23756.5632

Vertical Tunneling Transistor Based on Gr-hBN-χ3 Borophene Heterostructure with AA Stack

AUT Journal of Electrical Engineering
مقاله 4، دوره 57، شماره 3، 2025، صفحه 461-472    اصل مقاله (2.15 M)
نوع مقاله: Research Article
شناسه دیجیتال (DOI): 10.22060/eej.2025.23756.5632
نویسندگان
Reza Abbasi* 1؛ Rahim Faez2؛ Ashkan Horri3
1Department of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran
2Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran
3Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran
چکیده
In this paper, the electronic properties of vertical Gr-hBN-χ3 borophene heterostructure (AA stack between Gr and hBN layers), i.e., (Gr-hBN-χ3_AA), have been investigated by density functional theory (DFT). By using the tight-binding (TB) model and least-square fitting for TB and DFT band structures, optimal TB parameters are calculated. By exploiting the non-equilibrium Green function technique and capacitive model, we have investigated the vertical tunneling transistor (VTFET) based on Gr-hBN-χ3_AA. Also, the figure of merit (FOM) of the device, such as the ION/IOFF ratio, subthreshold swing, and intrinsic gate-delay time, has been extracted. We have concluded that decreasing the width of the graphene nanoribbon improves the switching ratio, subthreshold swing, and gate-delay time. Also, compared to previous work (VTFET based on Gr-hBN-χ3_AB), it is seen that changing the stack between Gr and hBN layers has little effect on the FOM of the device. The gate-delay time of the device is 0.011 ps at room temperature.
کلیدواژه‌ها
Borophene؛ Density Functional Theory؛ Nonequilibrium Green Function؛ Vertical Tunneling Transistor
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