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Exploring Performance of Nanoscale Reconfigurable Germanium Transistor for Advanced Logic Gate Design and Functionality | ||
| AUT Journal of Electrical Engineering | ||
| مقاله 2، دوره 57، شماره 3، 2025، صفحه 435-444 اصل مقاله (1.17 M) | ||
| نوع مقاله: Research Article | ||
| شناسه دیجیتال (DOI): 10.22060/eej.2025.23481.5615 | ||
| نویسنده | ||
| Zahra Ahangari* | ||
| Department of Electronics, YI.C., Islamic Azad University, Tehran, Iran | ||
| چکیده | ||
| This paper investigates the electrical characteristics of a germanium reconfigurable transistor and comprehensively evaluates the impact of crucial design parameters on the device performance. The transistor can operate in both n-mode and p-mode simply by adjusting the bias of the electrodes. The findings demonstrate that the on-state current for n-mode operation is 1.3×10-4 (A/µm) and for p-mode operation is 8.5×10-5 (A/µm). Additionally, the on/off current ratio is 1.34×105 for n-mode and 2.35×105 for p-mode. The subthreshold swing of the device has also been computed. In n-mode operation, a subthreshold swing of 95 mV/dec is achieved, while in p-mode, a subthreshold swing of 108 mV/dec is observed at the maximum slope of the transfer characteristics. A notable feature of this device is the incorporation of a two-input XNOR logic gate as well as a two-input AND logic gate within a single transistor. The implementation of logic gates using a single reconfigurable transistor presents significant benefits in terms of energy efficiency and speed for upcoming advanced integrated circuits. | ||
| کلیدواژهها | ||
| Reconfigurable Transistor؛ Logic Gate؛ Schottky Barrier Transistor؛ Direct Tunneling؛ Germanium Transistor | ||
| مراجع | ||
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