پیوندهای مفید
آمار
| تعداد نشریات | 9 |
| تعداد شمارهها | 452 |
| تعداد مقالات | 5,748 |
| تعداد مشاهده مقاله | 8,234,483 |
| تعداد دریافت فایل اصل مقاله | 6,752,150 |
Exploring Performance of Nanoscale Reconfigurable Germanium Transistor for Advanced Logic Gate Design and Functionality | ||
| AUT Journal of Electrical Engineering | ||
| مقاله 2، دوره 57، شماره 3، 2025، صفحه 435-444 اصل مقاله (1.17 M) | ||
| نوع مقاله: Research Article | ||
| شناسه دیجیتال (DOI): 10.22060/eej.2025.23481.5615 | ||
| نویسنده | ||
| Zahra Ahangari* | ||
| Department of Electronics, YI.C., Islamic Azad University, Tehran, Iran | ||
| چکیده | ||
| This paper investigates the electrical characteristics of a germanium reconfigurable transistor and comprehensively evaluates the impact of crucial design parameters on the device performance. The transistor can operate in both n-mode and p-mode simply by adjusting the bias of the electrodes. The findings demonstrate that the on-state current for n-mode operation is 1.3×10-4 (A/µm) and for p-mode operation is 8.5×10-5 (A/µm). Additionally, the on/off current ratio is 1.34×105 for n-mode and 2.35×105 for p-mode. The subthreshold swing of the device has also been computed. In n-mode operation, a subthreshold swing of 95 mV/dec is achieved, while in p-mode, a subthreshold swing of 108 mV/dec is observed at the maximum slope of the transfer characteristics. A notable feature of this device is the incorporation of a two-input XNOR logic gate as well as a two-input AND logic gate within a single transistor. The implementation of logic gates using a single reconfigurable transistor presents significant benefits in terms of energy efficiency and speed for upcoming advanced integrated circuits. | ||
| کلیدواژهها | ||
| Reconfigurable Transistor؛ Logic Gate؛ Schottky Barrier Transistor؛ Direct Tunneling؛ Germanium Transistor | ||
| مراجع | ||
|
[1] R.-H. Yan, A. Ourmazd, K.F. Lee, Scaling the Si MOSFET: From bulk to SOI to bulk, IEEE transactions on electron devices, 39(7) (1992) 1704-1710.
[2] R. Muralidhar, I. Lauer, J. Cai, D.J. Frank, P. Oldiges, Toward ultimate scaling of mosfet, IEEE Transactions on Electron Devices, 63(1) (2015) 524-526.
[3] R.K. Ratnesh, A. Goel, G. Kaushik, H. Garg, M. Singh, B. Prasad, Advancement and challenges in MOSFET scaling, Materials Science in Semiconductor Processing, 134 (2021) 106002.
[4] T. Mikolajick, G. Galderisi, S. Rai, M. Simon, R. Böckle, M. Sistani, C. Cakirlar, N. Bhattacharjee, T. Mauersberger, A. Heinzig, Reconfigurable field effect transistors: A technology enablers perspective, Solid-State Electronics, 194 (2022) 108381.
[5] C. Navarro, S. Barraud, S. Martinie, J. Lacord, M.-A. Jaud, M. Vinet, Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations, Solid-State Electronics, 128 (2017) 155-162.
[6] A. Fuchsberger, L. Wind, M. Sistani, R. Behrle, D. Nazzari, J. Aberl, E. Prado Navarrete, L. Vukŭsić, M. Brehm, P. Schweizer, Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts, Advanced Electronic Materials, 9(6) (2023) 2201259.
[7] S. Larentis, B. Fallahazad, H.C. Movva, K. Kim, A. Rai, T. Taniguchi, K. Watanabe, S.K. Banerjee, E. Tutuc, Reconfigurable complementary monolayer MoTe2 field-effect transistors for integrated circuits, ACS nano, 11(5) (2017) 4832-4839.
[8] J. Zhang, X. Tang, P.-E. Gaillardon, G. De Micheli, Configurable circuits featuring dual-threshold-voltage design with three-independent-gate silicon nanowire FETs, IEEE Transactions on Circuits and Systems I: Regular Papers, 61(10) (2014) 2851-2861.
[9] D. Wee, H.T. Kwon, W.J. Lee, H.-S. Choi, Y.J. Park, B. Kim, Y. Kim, U-shaped reconfigurable field-effect transistor, Journal of Semiconductor Technology and Science, 19(1) (2019) 63-68.
[10] X. Li, Y. Sun, X. Li, Y. Shi, Z. Liu, Electronic assessment of novel arch-shaped asymmetrical reconfigurable field-effect transistor, IEEE Transactions on Electron Devices, 67(4) (2020) 1894-1901.
[11] C. Wang, J. Hu, Z. Liu, X. Li, Y. Shi, Y. Sun, TCAD Simulations of Reconfigurable Field-Effect Transistor With Embedded-Fin-Contact to Improve On-Current, IEEE Transactions on Electron Devices, (2024).
[12] Y. Yao, Y. Sun, X. Li, Y. Shi, Z. Liu, Novel reconfigurable field-effect transistor with asymmetric spacer engineering at drain side, IEEE Transactions on Electron Devices, 67(2) (2020) 751-757.
[13] C. Navarro, C. Marquez, S. Navarro, F. Gamiz, Dual PN source/drain reconfigurable FET for fast and low-voltage reprogrammable logic, IEEE Access, 8 (2020) 132376-132381.
[14] X. Jin, S. Zhang, X. Liu, A dual-doping nonvolatile reconfigurable FET, Scientific Reports, 13(1) (2023) 5634.
[15] C. Navarro, L. Donetti, J. Padilla, C. Medina, J. Ávila, J. Galdón, M. Recio, C. Márquez, C. Sampedro, F. Gámiz, Performance of FDSOI double-gate dual-doped reconfigurable FETs, Solid-State Electronics, 194 (2022) 108336.
[16] H. Ye, J. Hu, X. Zou, Z. Sun, X. Li, Y. Shen, Z. Liu, X. Li, X. Dong, F. Lu, Novel Negative Capacitance Reconfigurable Transistor with Arch-Shaped Source, IEEE Transactions on Nanotechnology, (2025).
[17] H. Ye, J. Hu, Z. Liu, C. Wang, X. Li, Y. Shi, Z. Mao, Y. Sun, Novel Reconfigurable Transistor With Extended Source/Drain Beyond 3 nm Technology Node, IEEE Transactions on Electron Devices, (2024).
[18] A. Fuchsberger, L. Wind, D. Nazzari, L. Kühberger, D. Popp, J. Aberl, E.P. Navarrete, M. Brehm, L. Vogl, P. Schweizer, A run-time reconfigurable Ge field-effect transistor with symmetric on-states, IEEE Journal of the Electron Devices Society, 12 (2024) 83-87.
[19] D. Zeng, R. Ding, G. Liu, H. Lu, M. Zhang, Z. Xue, Z. Tian, Z. Di, Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics, Advanced Electronic Materials, 10(2) (2024) 2300621.
[20] X. Zhao, N. Zhang, L. Qi, B. Wang, F. Tan, C. Chang, M. Liu, M. Che, Y. Shi, Y. Li, Bipolar Tunable Field-Effect Transistor Based on the Td-MoTe2/WSe2 Heterojunction with Reconfigurable Polarity Transition for Enhanced Photodetection, ACS Photonics, 11(11) (2024) 4854-4864.
[21] Z. Zhao, J. Kang, S. Rakheja, W. Zhu, Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating, Applied Physics Letters, 124(7) (2024).
[22] G.V. Resta, S. Sutar, Y. Balaji, D. Lin, P. Raghavan, I. Radu, F. Catthoor, A. Thean, P.-E. Gaillardon, G. De Micheli, Polarity control in WSe2 double-gate transistors, Scientific Reports, 6(1) (2016) 29448.
[23] P. Wu, J. Appenzeller, Reconfigurable black phosphorus vertical tunneling field-effect transistor with record high on-currents, IEEE Electron Device Letters, 40(6) (2019) 981-984.
[24] G. Galderisi, T. Mikolajick, J. Trommer, Reliability of Reconfigurable Field Effect Transistors: Early Analysis of Bias Temperature Instability, in: 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), IEEE, 2024, pp. 1-7.
[25] A. Kumar, S. Kale, Dual-k reconfigurable silicon nanowire Schottky barrier transistor for biosensing, in: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), IEEE, 2024, pp. 1-3.
[26] V. Thakur, A. Kumar, S. Kale, Numerical modeling and performance analysis of underlap gate cavity-integrated reconfigurable silicon nanowire Schottky barrier transistor biosensors, Applied Physics A, 130(11) (2024) 1-13.
[27] A. Kumar, S. Kale, Reconfigurable Silicon Nanowire-Based Schottky Barrier Transistor for pH Sensor: A Comprehensive Study, in: 2024 IEEE International Conference on Smart Power Control and Renewable Energy (ICSPCRE), IEEE, 2024, pp. 1-6.
[28] D. Han, Y. Wang, D. Tian, W. Wang, X. Liu, J. Kang, R. Han, Studies of Ti-and Ni-germanide Schottky contacts on n-Ge (1 0 0) substrates, Microelectronic engineering, 82(2) (2005) 93-98.
[29] ATLAS User Manual, Santa Clara, USA: Silvaco International, (2015).
[30] M. Bucher, N. Makris, L. Chevas, Generalized constant current method for determining MOSFET threshold voltage, IEEE Transactions on Electron Devices, 67(11) (2020) 4559-4562.
[31] A. Ortiz-Conde, F.J. García-Sánchez, J. Muci, A.T. Barrios, J.J. Liou, C.-S. Ho, Revisiting MOSFET threshold voltage extraction methods, Microelectronics Reliability, 53(1) (2013) 90-104. | ||
|
آمار تعداد مشاهده مقاله: 471 تعداد دریافت فایل اصل مقاله: 338 |
||